ITEMS SPEC TEST METHOD Growth Technique CZ Diameter 50.8±0.38mm Type/Dopant P/Boron Resistivity 1~30Ωcm Crystal Orientation (100) Orientation Flat SEMI-STD Thickness 275+/-25Ωcm Warp < 30.0μm Flatness Global TTV < 30μm Global TIR < 5.0μm Diameter Diameter 50mm 75mm 100mm 125mm 150mm 200mm 300mm Orientation 100 111 110 Type/Dopantt P(Boron) N(Phosphours) N(Antimony) Resistivity Ω- cm Thickness μm Surface Single side Polishde Double side Polishde Quantity pcs Remark Name Company Division Addr E-mail Tel H/P Fax