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ITEMS |
SPEC |
TEST METHOD |
Growth Technique |
CZ |
- |
Diameter |
200¡¾0.2mm |
ASTM F 613 |
Type/Dopant |
P.P+/Boron N/Phosphorus N+/Antimony |
ASTM F 42 |
Resistivity |
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ASTM F 673 |
p,p+ |
0.01-70¥Øcm |
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N |
0.01-40¥Øcm |
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N+ |
0.005-0.02¥Øcm |
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Crystal Orientation |
(100)/(100) |
ASTM F 26 |
Orientation Flat |
SEMI-STD or Custom |
ASTM F 847 |
Oxygen(New ASTM) |
10-18ppma(Range of target value) |
ASTM F 1188 |
Thickness |
SEMI-STD or Custom |
ASTM F 533 |
Laser Marking |
SEMI-STD or Custom |
SEMI-STD M12/M13 |
Warp |
< 25.0¥ìm |
ASTM F 657/F 534 |
Flatness |
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Global TTV |
< 2.0¥ìm |
ASTM F 657 |
Global TIR |
< 1.5¥ìm |
ASTM F 1530 |
STIR(20¡¿20mm) |
< 0.25¥ìm |
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Backside Condition |
Etched/Polished |
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Backside Treatment |
Soft damaged or Poly Backseal |
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Metallic Impurity |
2E10 atoms/cm©÷ |
ICP - MS |
LPD |
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Particle Counter |
£À > 0.12 ¥ìm |
20 ea/wafer |
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£À > 0.16 ¥ìm |
Average 3 ea/wafer |
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