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| ITEMS |
SPEC |
TEST METHOD |
| Growth Technique |
CZ |
- |
| Diameter |
300±0.2mm |
ASTM F 613 |
| Type/Dopant |
P.P+/Boron |
ASTM F 42 |
| Resistivity |
0.01-70Ωcm |
ASTM F 673 |
| Crystal Orientation |
(1-0-0) |
ASTM F 26 |
| Orientation Flat |
SEMI-STD or Custom |
ASTM F 847/F 671 |
| Oxygen(New ASTM) |
8-14ppma(Range of target value) |
ASTM F 1188 |
| Thickness |
SEMI-STD or Custom |
ASTM F 533 |
| Laser Marking |
SEMI-STD or Custom |
SEMI-STD M12/M13 |
| Warp |
< 20.0μm |
ASTM F 657/F 534 |
| Flatness |
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| Global TTV |
< 3.0μm |
ASTM F 657 |
| STIR(20×20mm) |
< 0.5μm |
Backside Reference |
| Backside Condition |
Polished |
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| Metallic Impurity |
Average 1.5E10 atoms/cm² |
ICP - MS |
| LPD |
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SP1-DLSr |
| ＠ > 0.9 μm |
Average 50 ea/wafer |
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| ＠ > 0.12 μm |
Average 40 ea/wafer |
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| ＠ > 0.20 μm |
Average 7 ea/wafer |
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