ITEMS SPEC TEST METHOD   Growth Technique   CZ   -   Diameter   200±0.2mm   ASTM F 613   Type/Dopant   P.P+/Boron  N/Phosphorus  N+/Antimony   ASTM F 42   Resistivity      ASTM F 673   p,p+   0.01-70Ωcm      N   0.01-40Ωcm      N+   0.005-0.02Ωcm      Crystal Orientation   (100)/(100)   ASTM F 26   Orientation Flat   SEMI-STD or Custom   ASTM F 847   Oxygen(New ASTM)   10-18ppma(Range of target value)   ASTM F 1188   Thickness   SEMI-STD or Custom   ASTM F 533   Laser Marking   SEMI-STD or Custom   SEMI-STD M12/M13   Warp   < 25.0μm   ASTM F 657/F 534   Flatness         Global TTV   < 2.0μm   ASTM F 657   Global TIR   < 1.5μm   ASTM F 1530   STIR(20×20mm)   < 0.25μm      Backside Condition   Etched/Polished      Backside Treatment   Soft damaged or Poly Backseal      Metallic Impurity   2E10 atoms/cm²   ICP - MS   LPD      Particle Counter   ＠ > 0.12 μm   20 ea/wafer      ＠ > 0.16 μm   Average 3 ea/wafer    Diameter Diameter 50mm 75mm 100mm 125mm 150mm 200mm 300mm Orientation 100 111 110 Type/Dopantt P(Boron) N(Phosphours) N(Antimony) Resistivity Ω- cm Thickness μm Surface Single side Polishde Double side Polishde Quantity pcs Remark Name Company Division Addr E-mail Tel H/P Fax