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| Parameter |
Unit |
VGF/LE-VB Grown |
LEC Grown |
| Conduction Type/Dopant |
|
SC, SI /Si, Zn, Undoped |
SI / Undoped |
| Diameter |
inch |
2 |
3 |
3 |
4 |
6 |
| mm |
50.8 ± 0.1 |
76.2 ± 0.1 |
76.2 ± 0.1 |
100 ± 0.1 |
150 ± 0.1 |
| Orientation |
|
(100) ± 0.3˚ |
(100) ± 0.3˚ |
(100) ± 0.3˚ |
(100) ± 0.3˚ |
(100) ± 0.3˚ |
| Off Orientation* |
A |
2˚± 0.3˚ |
2˚± 0.3˚ |
2˚± 0.3˚ |
2˚± 0.3˚ |
2˚± 0.3˚ |
| B |
15˚± 0.3˚ |
15˚± 0.3˚ |
Upon Request |
| Orientation Flat/Primary Flat |
Length |
mm |
17 ± 1 |
22 ± 1 |
22 ± 1 |
32.5 ± 1 |
57.5 ± 1 |
| SEMI-US Orientation |
|
(01-1) |
(01-1) |
(01-1) |
(01-1) |
(01-1) |
| SEMI-EJ Orientation |
|
(0-1-1) |
(0-1-1) |
(0-1-1) |
(0-1-1) |
(0-1-1) |
| Identification Flat/Secondary Flat |
Length |
mm |
7 ± 1 |
11 ± 1 |
11 ± 1 |
18 ± 1 |
37.5 ± 1 |
| SEMI-US Orientation |
|
(011) |
(011) |
(011) |
(011) |
(011) |
| SEMI-EJ Orientation |
|
(0-11) |
(0-11) |
(0-11) |
(0-11) |
(0-11) |
| Notch |
Orientation |
|
|
(010) ± 2˚ |
| Angle |
degree |
90 +5/-1 |
| Depth |
mm |
1.00 +0.25 / -0.00 |
| Thickness* |
㎛ |
350 ± 25 |
625 ± 25 |
625 ± 25 |
625 ± 25 |
675 ± 25 |
| TTV* |
㎛ |
≤ 5 |
≤ 5 |
≤ 5 |
≤ 6 |
≤ 7 |
| TIR* |
㎛ |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 5 |
≤ 6 |
| LFPD* |
㎛ |
|
≤ 1.5 |
≤ 1.5 |
≤ 1.5 |
| LTV* |
㎛ |
≤ 2 |
≤ 2 |
≤ 2 |
| Warp* |
㎛ |
≤ 10 |
≤ 15 |
≤ 7 |
≤ 10 |
≤ 15 |
| Laser Marking |
|
N/A |
Upon Request |
According to SEMI M12 |
According to SEMI M12 |
| Surface |
Front Side |
|
Polished |
Polished |
Polished |
Polished |
Polished |
| Back Side-Standard |
|
Etched after Lapping |
Etched after Lapping |
Polished |
Polished |
Polished |
| Back Side-Option |
|
Polished |
Polished |
Etched after Lapping |
Etched after Lapping |
Etched after Lapping |
| Resistivity |
Ω.㎝ |
0.001 ~
0.1
(Si Doped) |
> 1E7 |
> 1E7 |
> 1E7 |
| Hall Mobility |
㎠/v.sec |
1,000 ~ 3,000 (Si Doped) |
>5,000, >6,000, >7,000 |
| Carrier Concentration |
cm-3 |
(0.1 ~ 3) E18 (Si Doped) |
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| EPD(Etch Pit Density) |
cm-2 |
<500, <1000 <5000,
<1E4 <2E4 |
< 8E4 |
< 1E5 |
< 1.5E5 |
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